ガリウムヒ素（GaAs）系及びtype II半導体を用いたTHz量子井戸遠赤外検出器（Quantum Well Infrared Photodetector:QWIP）

Adoption of THz imaging and spectroscopic techniques in practical applications is hindered by a lack of fast and sensitive multi-element detectors. We develop photodetectors and related technologies, which can be used in large-format THz arrays. We evaluate several prospective detector technologies based on: 1) GaAs/AlGaAs quantum wells; 2) strained-layer type-II InAs/GaInSb superlattices; 3) InAs/AlSb/GaSb tunneling nanostructures. The figures show various characteristics of the THz GaAs/AlGaAs quantum well photodetector.